TDA8000 Datasheet, PDF (15/24 Pages) NXP Semiconductors – Smart card interface

Philips Semiconductors
Smart card interface
Product specification
TDA8000; TDA8000T
SYMBOL
PARAMETER
CONDITIONS
MIN.
Data lines [I/O1, I/O2, I/O1(µC), I/O2(µC)]; note 5
V_OH
HIGH level output voltage on I/O 4.5 < V_SUP < 5.5;
4
4.5 < V_I/O(µC) < 5.5;
I_OH = −20 µA
4.5 < V_SUP < 5.5;
2.4
4.5 < V_I/O(µC) < 5.5;
I_OH = −200 µA
V_OL
LOW level output voltage on I/O I_I/O = 1 mA;
−
I/O(µC) grounded
I_IL
LOW level input current on I/O(µC) I/O(µC) grounded;
−
I_I/O = 0
I/O(µC) grounded;
−
I/O connected to V_CC
V_OH
HIGH level output voltage on
4.5 < V_I/O < 5.5
4
I/O(µC)
V_OL
LOW level output voltage on
I_I/O(µC) = 1 mA;
−
I/O(µC)
I/O grounded
I_IL
V_IDLE
Z_IDLE
LOW level input current on I/O
voltage on I/O outside a session
impedance on I/O(µC) outside a
session
I/O grounded; I_I/O(µC) = 0 −
I/O grounded; I/O(µC) −
connected to V_SUP
−
10
R_pu
internal pull-up resistance between
17
I/O and V_CC
t_r, t_f
rise and fall times
C_i = C_o = 30 pF
−
Protections
T_sd
I_CC(sd)
I_PP(sd)
I_I/O(sd)
shut-down local temperature
shut-down current at V_CC
shut-down current at V_PP
shut-down current at I/O
from I/O to I/O(µC)
−
−175
−90
3
Timing
t_act
activation sequence duration
see Fig.6
250
t_de
deactivation sequence duration see Fig.8
250
t₃
start of the window for sending
see Fig.6
−
CLK to the card
TYP.
MAX. UNIT
−
V_CC + 0.2 V
−
−
V
−
65
mV
−
−500
µA
−
−5
mA
−
V_SUP + 0.2 V
−
70
mV
−
−500
µA
−
−5
mA
−
0.4
V
−
−
MΩ
20
23
kΩ
−
1
µs
135
−
°C
−
−230
mA
−
−140
mA
−
5
mA
−
500
µs
−
500
µs
−
140
µs
1996 Dec 12
15