TDA8000 Datasheet, PDF (13/24 Pages) NXP Semiconductors – Smart card interface

Philips Semiconductors
Smart card interface
Product specification
TDA8000; TDA8000T
SYMBOL
PARAMETER
Reset output to the card (RST)
V_IDLE
V_OL
V_OH
output voltage in IDLE mode
LOW level output voltage
HIGH level output voltage
t_RST
delay between RSTIN and RST
t_r
rise time
t_f
fall time
Clock output to card (CLK)
V_IDLE
V_OL
V_OH
output voltage in IDLE mode
LOW level output voltage
HIGH level output voltage
t_r
rise time
t_f
fall time
δ
duty factor
∆δ/∆θ
thermal drift on duty factor
Card programming voltage (V_PP)
P
selected voltage
V_PP
output voltage
I_PP
output current
SR
slew rate
High-voltage input (V_H)
V_H
input voltage
I_H
input current at V_H
V_H − V_PP voltage drop
CONDITIONS
MIN.
TYP.
MAX. UNIT
−
−
0.4
V
I_OL = 200 µA
−
−
0.45
V
I_OH = −200 µA
4.0
−
V_CC
V
I_OH = −10 µA
V_CC − 0.7 −
V_CC
V
RST enabled; see Fig.6 −
−
2
µs
C_L = 330 pF
−
−
1
µs
C_L = 330 pF
−
−
1
µs
I_OL = 200 µA
I_OH = −200 µA
I_OH = −20 µA
I_OH = −10 µA
C_L = 30 pF; note 2
C_L = 30 pF; note 2
C_L = 30 pF; (XTAL or
CLKIN used); note 2
DIP and SO packages
−
−
−
−
2.4
−
0.7V_CC
−
V_CC − 0.7 −
−
−
−
−
45
−
0.4
V
0.4
V
V_CC + 0.3 V
V_CC + 0.3 V
V_CC + 0.3 V
18
ns
18
ns
55
%
−
−0.07 −
%/K
see Table 1
idle mode
read mode
write mode; I_PP < 50 mA
read mode
write mode
write mode; V_PP
short-circuited to GND
up or down
−
−
V_CC − 4% −
P − 2.5%⁽³⁾ −
−
−
−
−
−
−
0.80
1.0
0.4
V
V_CC + 4% V
P + 2.5%⁽³⁾ V
−50
mA
−50
mA
−400
mA
1.20
V/µs
−
idle mode
2
active mode; unloaded;
WRITE = 0
P=5V
3
P = 12.5 V
5
P = 15 V
6
P = 21 V
8
−
−
30
V
−
3
mA
−
7
mA
−
10
mA
−
11
mA
−
13
mA
−
2.2
V
1996 Dec 12
13