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80C652 Datasheet, PDF (11/25 Pages) NXP Semiconductors – CMOS single-chip 8-bit microcontrollers
Phlips Semiconductors
CMOS single-chip 8-bit microcontrollers
Product specification
80C652/83C652
DC ELECTRICAL CHARACTERISTICS
VSS = 0V
SYMBOL
PARAMETER
VIL
Input low voltage,
except EA, P1.6/SCL, P1.7/SDA
VIL1
Input low voltage to EA
VIL2
Input low voltage to P1.6/SCL, P1.7/SDA6
VIH
Input high voltage, except XTAL1, RST,
P1.6/SCL, P1.7/SDA
VIH1
Input high voltage, XTAL1, RST
VIH2
VOL
VOL1
VOL2
VOH
Input high voltage, P1.6/SCL, P1.7/SDA6
Output low voltage, ports 1, 2, 3,
except P1.6/SCL, P1.7/SDA
Output low voltage, port 0, ALE, PSEN
Output low voltage, P1.6/SCL, P1.7/SDA
Output high voltage, ports 1, 2, 3, ALE, PSEN10
PART TYPE
0 to +70°C
–40 to +85°C
–40 to +125°C
0 to +70°C
–40 to +85°C
–40 to +125°C
0 to +70°C
–40 to +85°C
–40 to +125°C
0 to +70°C
–40 to +85°C
–40 to +125°C
VOH1 Output high voltage; port 0 in external bus mode
IIL
Logical 0 input current, ports 1, 2, 3,
except P1.6/SCL, P1.7/SDA
ITL
Logical 1-to-0 transition current, ports 1, 2, 3,
except P1.6/SCL, P1.7/SDA
IL1
Input leakage current, port 0, EA
IL2
Input leakage current, P1.6/SCL, P1.7/SDA
IDD
RRST
CIO
Power supply current:
Active mode @ 16MHz2, 11
Active mode @ 24MHz2, 11
Idle mode @ 16MHz3, 11
Idle mode @ 24MHz3, 11
Power down mode4, 5
Power down mode4, 5
Internal reset pull-down resistor
Pin capacitance
NOTES ON NEXT PAGE.
0 to +70°C
–40 to +85°C
–40 to +125°C
0 to +70°C
–40 to +85°C
–40 to +125°C
–40 to +125°C
TEST
CONDITIONS
IOL = 1.6mA8, 9
IOL = 3.2mA8, 9
IOL = 3.0mA
IOH = –60µA
IOH = –25µA
IOH = –10µA
IOH = –800µA
IOH = –300µA
IOH = –80µA
VIN = 0.45V
See note 7
0.45V < VI < VDD
0V < VI < 6.0V
0V < VDD < 6.0V
See note 1
VDD=6.0V
VDD=5.5V
Freq.=1MHz
LIMITS
MIN.
MAX.
UNIT
–0.5
–0.5
–0.5
–0.5
–0.5
–0.5
–0.5
0.2VDD–0.1
V
0.2VDD–0.15 V
0.2VDD–0.25 V
0.2VDD–0.3
V
0.2VDD–0.35 V
0.2VDD–0.45 V
0.3VDD
V
0.2VDD+0.9 VDD+0.5
V
0.2VDD+1.0 VDD+0.5
V
0.2VDD+1.0 VDD+0.5
V
0.7VDD
VDD+0.5
V
0.7VDD+0.1 VDD+0.5
V
0.7VDD+0.1 VDD+0.5
V
0.7VDD
6.0
V
0.45
V
0.45
V
0.4
V
2.4
V
0.75VDD
V
0.9VDD
V
2.4
V
0.75VDD
V
0.9VDD
V
–50
µA
–75
µA
–75
µA
–650
µA
–750
µA
–750
µA
±10
µA
±10
µA
µA
26.5
mA
33.8
mA
6
mA
7
mA
50
µA
100
µA
50
150
kΩ
10
pF
1996 Aug 15
11