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MN101EF93G Datasheet, PDF (28/30 Pages) Panasonic Semiconductor – 8-bit Single-chip Microcontroller
MN101EF93G
8-bit Single-chip Microcontroller
PubNo. 21693-013E
1.5.7 Flash EEPROM Program Conditions
G. Flash EEPROM Program Conditions
VDD5 = 4.0 V to 5.5 V VSS = 0 V*11
Ta = -40 C to +85 C
Parameter
Symbol
Conditions
Rating
Unit
MIN TYP MAX
G1
Programming supply volt-
age
Programming/Erasing
G2 times of 32KB, 20KB
Sector *2
G3
Programming/Erasing
times of 4KB Sector *2
G4
Data retention period of
32KB, 20KB Sector *1
VDDEW
EMAX1
EMAX2
THOLD1 Ta= 85C, P/E times 1000
4.0
1000
10000
20
5.5
V
Times
Times
Years
G5
Data retention period of
4KB Sector *1
THOLD2 Ta= 85C, P/E times 1000 *2
THOLD3 Ta= 65C, P/E times 10000 *2
20
20
Years
Years
*1 Contain the period when power supply voltage is not supplied.
*2 Programming/Erasing times(P/E Times) is counted by the number of time a sector is erased. It is controlled on sector basis.
For example, if writing 1 byte of data in any sector for hundred of times and then erasing the sector, a single rewriting is counted.
Also, the number of times of rewriting in another sector, in which erasing is not performed, is not counted.
Overwriting data is disabled. To rewrite data, write the data after erasing sectors.
Publication date: February 2015