NSBC114EPDXV6T1G Datasheet, PDF (9/14 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 NPN TRANSISTOR
10
I_C/I_B = 10
1
0.1
1000
T_A = -25°C
25°C
100
75°C
V_CE = 10 V
T_A = 75°C
25°C
-25°C
0.01
0
20
40
I_C, COLLECTOR CURRENT (mA)
Figure 22. V_CE(sat) versus I_C
50
10 ₁
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 23. DC Current Gain
1
100
f = 1 MHz
25°C
75°C
I_E = 0 V
0.8
T_A = 25°C
10
T_A = -25°C
0.6
1
0.4
0.1
0.2
0.01
0
0.001
0
10
20
30
40
50
0
V_R, REVERSE BIAS VOLTAGE (VOLTS)
V_O = 5 V
2
4
6
8
10
V_in, INPUT VOLTAGE (VOLTS)
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
100
V_O = 0.2 V
10
T_A = -25°C
25°C
75°C
1
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
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