NSBC114EPDXV6T1G Datasheet, PDF (3/14 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted, common for Q₁ and Q₂, − minus sign for Q₁ (PNP) omitted)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS (Note 3)
Collector-Emitter Saturation Voltage
V_CE(sat)
(I_C = 10 mA, I_B = 0.3 mA)
NSBC114EPDXV6T1G
−
−
NSBC124EPDXV6T1G
−
−
NSBC144EPDXV6T1G
−
−
NSBC114YPDXV6T1G
−
−
NSBC143TPDXV6T1G
−
−
NSBC123JPDXV6T1G
−
−
(I_C = 10 mA, I_B = 5 mA)
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
−
−
−
−
(I_C = 10 mA, I_B = 1 mA)
NSBC114TPDXV6T1G
NSBC143EPDXV6T1G
−
−
−
−
NSBC143ZPDXV6T1G
−
−
NSBC124XPDXV6T1G
−
−
Output Voltage (on)
V_OL
(V_CC = 5.0 V, V_B = 2.5 V, R_L = 1.0 kW)
NSBC114EPDXV6T1G
−
−
NSBC124EPDXV6T1G
−
−
NSBC114YPDXV6T1G
−
−
NSBC114TPDXV6T1G
−
−
NSBC143TPDXV6T1G
−
−
NSBC113EPDXV6T1G
−
−
NSBC123EPDXV6T1G
−
−
NSBC143EPDXV6T1G
−
−
NSBC143ZPDXV6T1G
−
−
NSBC124XPDXV6T1G
−
−
NSBC123JPDXV6T1G
−
−
(V_CC = 5.0 V, V_B = 3.5 V, R_L = 1.0 kW)
NSBC144EPDXV6T1G
−
−
Output Voltage (off)
V_OH
(V_CC = 5.0 V, V_B = 0.5 V, R_L = 1.0 kW)
NSBC114EPDXV6T1G
4.9
−
NSBC124EPDXV6T1G
4.9
−
NSBC144EPDXV6T1G
4.9
−
NSBC114YPDXV6T1G
4.9
−
NSBC143TPDXV6T1G
4.9
−
NSBC143ZPDXV6T1G
4.9
−
NSBC124XPDXV6T1G
4.9
−
NSBC123JPDXV6T1G
4.9
−
(V_CC = 5.0 V, V_B = 0.050 V, R_L = 1.0 kW)
(V_CC = 5.0 V, V_B = 0.25 V, R_L = 1.0 kW)
NSBC113EPDXV6T1G
NSBC114TPDXV6T1G
NSBC123EPDXV6T1G
4.9
−
4.9
−
4.9
−
NSBC143EPDXV6T1G
4.9
−
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Max
Unit
Vdc
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Vdc
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
−
−
−
−
−
−
−
−
−
−
−
−
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