NSBC114EPDXV6T1G Datasheet, PDF (4/14 Pages) ON Semiconductor – Dual Bias Resistor Transistors

NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
ELECTRICAL CHARACTERISTICS
(T_A = 25°C unless otherwise noted, common for Q₁ and Q₂, − minus sign for Q₁ (PNP) omitted)
Characteristic
Symbol
Min
ON CHARACTERISTICS (Note 3)
Input Resistor
NSBC114EPDXV6T1G
R1
7.0
NSBC124EPDXV6T1G
15.4
NSBC144EPDXV6T1G
32.9
NSBC114YPDXV6T1G
7.0
NSBC114TPDXV6T1G
7.0
NSBC143TPDXV6T1G
3.3
NSBC113EPDXV6T1G
0.7
NSBC123EPDXV6T1G
1.5
NSBC143EPDXV6T1G
3.3
NSBC143ZPDXV6T1G
3.3
NSBC124XPDXV6T1G
15.4
NSBC123JPDXV6T1G
1.54
Resistor Ratio
NSBC114EPDXV6T1G
NSBC124EPDXV6T1G
NSBC144EPDXV6T1G
NSBC114YPDXV6T1G
NSBC114TPDXV6T1G
NSBC143TPDXV6T1G
NSBC113EPDXV6T1G
NSBC123EPDXV6T1G
NSBC143EPDXV6T1G
NSBC143ZPDXV6T1G
NSBC124XPDXV6T1G
NSBC123JPDXV6T1G
R1/R2
0.8
0.8
0.8
0.17
−
−
0.8
0.8
0.8
0.055
0.38
0.038
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
Typ
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
1.0
1.0
1.0
0.21
−
−
1.0
1.0
1.0
0.1
0.47
0.047
Max
Unit
13
kW
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
1.2
1.2
1.2
0.25
−
−
1.2
1.2
1.2
0.185
0.56
0.056
300
250
200
150
100
50
R_qJA = 490°C/W
0
− 50
0
50
100
150
T_A, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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