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NSBC114EPDXV6T1G Datasheet, PDF (8/14 Pages) ON Semiconductor – Dual Bias Resistor Transistors | |||
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NSBC114EPDXV6T1G, NSBC114EPDXV6T5G
TYPICAL ELECTRICAL CHARACTERISTICS â NSBC124EPDXV6T1 PNP TRANSISTOR
10
IC/IB = 10
1000
VCE = 10 V
1
25°C
TAâ=â-25°C
100
75°C
â0.1
TAâ=â75°C
25°C
-25°C
0.01
0
â20
â40
IC, COLLECTOR CURRENT (mA)
Figure 17. VCE(sat) versus IC
10
â50
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
4
100
f = 1 MHz
75°C 25°C
3
lE = 0 V
TA = 25°C
10
TAâ=â-25°C
1
2
â0.1
1
â0.01
VO = 5 V
0
0
10
20
30
40
50
â0.001 0 1 â2 â3 â4 â5 â6 â7 â8 â9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
100
VO = 0.2 V
TAâ=â-25°C
10
25°C
75°C
1
â0.1
0
10
â20
â30
â40
â50
IC, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
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