MC34152 Datasheet, PDF (9/12 Pages) ON Semiconductor – HIGH SPEED DUAL MOSFET DRIVERS

MC34152, MC33152, NCV33152
I_B
+
V_in
0
−
R_g(on)
R_g(off)
V_in
Base
Charge
Removal
C₁
In noise sensitive applications, both conducted and radiated EMI can
be reduced significantly by controlling the MOSFET’s turn−on and
turn−off times.
Figure 23. Controlled MOSFET Drive
V_CC = 15V
47 0.1
+6
+
−
+
5.7V
2
V_CC
10k
2N3904
4
330
100k
pF
3
The totem−pole outputs can furnish negative base current for
enhanced transistor turn−off, with the addition of capacitor C₁.
Figure 24. Bipolar Transistor Drive
7
6.8 10
+
1N5819
+
47
+ V_O ≈ 2 .0V_CC
5
6.8 10
+
1N5819
− V_O ≈ −V_CC
47 ₊
The capacitor’s equivalent series resistance limits the Drive Output Current to 1.5 A. An
additional series resistor may be required when using tantalum or other low ESR capacitors.
Figure 25. Dual Charge Pump Converter
Output Load Regulation
I_O (mA)
0
1.0
10
20
30
50
+V_O (V)
27.7
27.4
26.4
25.5
24.6
22.6
−V_O (V)
−13.3
−12.9
−11.9
−11.2
−10.5
−9.4
http://onsemi.com
9