MC34152 Datasheet, PDF (5/12 Pages) ON Semiconductor – HIGH SPEED DUAL MOSFET DRIVERS

90% −
10% −
MC34152, MC33152, NCV33152
V_CC = 12 V
V_in = 0 V to 5.0 V
C_L = 1.0 nF
T_A = 25°C
Drive Output
Logic Input
50 ns/DIV
Figure 8. Propagation Delay
3.0
High State Clamp (Drive
Output Driven Above V_CC)
2.0
1.0
V_CC
0
V_CC = 12 V
80 ms Pulsed Load
120 Hz Rate
T_A = 25°C
0
−1.0
0
Low State Clamp (Drive
GND
Output Driven Below Ground)
0.2 0.4 0.6 0.8 1.0 1.2 1.4
I_O, OUTPUT CLAMP CURRENT (A)
Figure 9. Drive Output Clamp Voltage
versus Clamp Current
0
−1.0
V_CC
Source Saturation V_CC = 12 V
(Load to Ground) 80 ms Pulsed Load
120 Hz Rate
−2.0
T_A = 25°C
−3.0
3.0
2.0
1.0
0
0
Sink Saturation
(Load to V_CC)
GND
0.2
0.4
0.6
0.8
1.0
1.2 1.4
I_O, OUTPUT CLAMP CURRENT (A)
Figure 10. Drive Output Saturation Voltage
versus Load Current
0
−0.5
Source Saturation
(Load to Ground) V_CC
−0.7 V_CC = 12 V
−0.9
−1.1
I_source = 10 mA
I_source = 400 mA
1.9
1.7
I_sink = 400 mA
1.5
1.0
0.8
I_sink = 10 mA
0.6
Sink Saturation
(Load to V_CC)
GND
0−55 _−25
0
25 50
75 100 125
T_A, AMBIENT TEMPERATURE (°C)
Figure 11. Drive Output Saturation Voltage
versus Temperature
90% −
10% −
V_CC = 12 V
V_in = 0 V to 5.0 V
C_L = 1.0 nF
T_A = 25°C
10 ns/DIV
Figure 12. Drive Output Rise Time
90% −
V_CC = 12 V
V_in = 0 V to 5.0 V
C_L = 1.0 nF
T_A = 25°C
10% −
10 ns/DIV
Figure 13. Drive Output Fall Time
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