MJE18004G Datasheet, PDF (7/11 Pages) ON Semiconductor – NPN Bipolar Power Transistor For Switching Power Supply Applications

MJE18004G, MJF18004G
5
4 ^VCE
3
2
1
0
dyn 1 ms
dyn 3 ms
10
9 ^IC
8
7
6
5 V_CLAMP
t_si
10% V_CLAMP
90% I_C
t_fi
t_c
10% I_C
-1
-2
90% I_B
4
3 ^IB
90% I_B1
-3
1 ms
2
-4
3 ms
1
-5 ^IB
0
0
1
2
3 _{TIM4 E} 5
6
7
8
0
1
2
3
4
5
6
7
8
TIME
Figure 18. Dynamic Saturation Voltage Measurements
Figure 19. Inductive Switching Measurements
+15 V
1 mF
150 W
3W
100 W
3W
MPF930
+10 V
MPF930
MTP8P10
100 mF
MTP8P10
MUR105
R_B1
I_out
A
V_CE
I_B1
I_B
50 W
COMMON
500 mF
-V_off
MJE210
150 W
3W
R_B2
MTP12N10
1 mF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
V_CC = 20 VOLTS
I_C(pk) = 100 mA
V_CE PEAK
I_C PEAK
I_B2
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
V_CC = 15 VOLTS
RB1 SELECTED FOR
DESIRED I_B1
RBSOA
L = 500 mH
RB2 = 0
V_CC = 15 VOLTS
RB1 SELECTED
FOR DESIRED I_B1
Table 1. Inductive Load Switching Drive Circuit
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