MJE18004G Datasheet, PDF (6/11 Pages) ON Semiconductor – NPN Bipolar Power Transistor For Switching Power Supply Applications

MJE18004G, MJF18004G
TYPICAL SWITCHING CHARACTERISTICS
(I_B2 = I_C/2 for all switching)
160
300
150
140
130
T_J = 25°C
V_Z = 300 V
T_J = 125°C
V_CC = 15 V
I_B(off) = I_C/2
250
I_C = 2 A
L_C = 200 mH
I_C = 1 A
V_Z = 300 V
V_CC = 15 V
I_B(off) = I_C/2
L_C = 200 mH
200
120
110
100
90
80
I_C = 1 A
70
3 4 5 6 7 8 9 10 11 12 13 14 15
h_FE, FORCED GAIN
150
I_C = 2 A
100
T_J = 25°C
T_J = 125°C
50
3 4 5 6 7 8 9 10 11 12 13 14 15
h_FE, FORCED GAIN
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
100
DC (MJE18004)
5 ms
10
1.0
GUARANTEED SAFE OPERATING AREA INFORMATION
6.0
1 ms
50 ms 10 ms 1 ms
5.0
4.0
Extended
SOA
3.0
T_C ≤ 125°C
I_C/I_B ≥ 4
L_C = 500 mH
DC (MJF18004)
0.1
0.01
10
100
1000
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
2.0
1.0 _{VBE(off) =}
0V
-1.5 V
0
400 500 600 700 800
- 5 V
900 1000 1100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 16. Reverse Bias Safe Operating Area
There are two limitations on the power handling ability of a tran-
1.0
sistor: average junction temperature and second breakdown. Safe
operating area curves indicate I_C−V_CE limits of the transistor that
SECOND
must be observed for reliable operation; i.e., the transistor must not
0.8
BREAKDOWN
be subjected to greater dissipation than the curves indicate. The data
DERATING
of Figure 15 is based on T_C = 25°C; T_J(pk) is variable depending on
power level. Second breakdown pulse limits are valid for duty
0.6
cycles to 10% but must be derated when T_C ≥ 25°C. Second break-
down limitations do not derate the same as thermal limitations. Al-
0.4
lowable current at the voltages shown on Figure 15 may be found at
any case temperature by using the appropriate curve on Figure 17.
0.2
THERMAL
DERATING
T_J(pk) may be calculated from the data in Figures 20 and 21. At any
case temperatures, thermal limitations will reduce the power that
can be handled to values less the limitations imposed by second
0
breakdown. For inductive loads, high voltage and current must be
20
40
60
80 100 120 140 160 sustained simultaneously during turn−off with the base−to−emitter
T_C, CASE TEMPERATURE (°C)
junction reverse biased. The safe level is specified as a reverse−
biased safe operating area (Figure 16). This rating is verified under
Figure 17. Forward Bias Power Derating
clamped conditions so that the device is never subjected to an ava-
lanche mode.
http://onsemi.com
6