MJE18004G Datasheet, PDF (4/11 Pages) ON Semiconductor – NPN Bipolar Power Transistor For Switching Power Supply Applications

100
T_J = 125°C
T_J = - 20°C
10
T_J = 25°C
MJE18004G, MJF18004G
TYPICAL STATIC CHARACTERISTICS
V_CE = 1 V
100
T_J = 125°C
T_J = - 20°C
10
T_J = 25°C
V_CE = 5 V
1
0.01
0.10
1.00
10.00
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
1
0.01
0.10
1.00
10.00
I_C, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 5 Volts
2.0
10.00
T_J = 25°C
1.5
1.5 A
1.00
2A 3A 4A
1.0
1A
0.5
I_C = 0.5 A
0
0.01
0.10
1.00
I_B, BASE CURRENT (AMPS)
Figure 3. Collector Saturation Region
10.00
0.10
I_C/I_B = 10
I_C/I_B = 5
0.01
0.01
T_J = 25°C
T_J = 125°C
0.10
1.00
I_C, COLLECTOR CURRENT (AMPS)
10.00
Figure 4. Collector−Emitter Saturation Voltage
1.1
10000
1.0
T_J = 25°C
C_ib
f = 1 MHz
0.9
1000
0.8
0.7 ^TJ ^{= 25°C}
100
C_ob
0.6
T_J = 125°C
0.5
10
I_C/I_B = 10
I_C/I_B = 5
0.4
0.01
1
0.10
1.00
10.00
1
I_C, COLLECTOR CURRENT (AMPS)
Figure 5. Base−Emitter Saturation Region
10
100
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
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