MJE18004G Datasheet, PDF (1/11 Pages) ON Semiconductor – NPN Bipolar Power Transistor For Switching Power Supply Applications

MJE18004G, MJF18004G
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18004G have an applications specific state−of−the−art
die designed for use in 220 V line−operated SWITCHMODE Power
supplies and electronic light ballasts.
Features
• Improved Efficiency Due to Low Base Drive Requirements:
♦ High and Flat DC Current Gain h_FE
♦ Fast Switching
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)
• Full Characterization at 125_C
• ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproducible Parametric Distributions
• Two Package Choices: Standard TO−220 or Isolated TO−220
• MJF18004, Case 221D, is UL Recognized at 3500 V_RMS: File
#E69369
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
Base Current
− Continuous
− Peak (Note 1)
RMS Isolation Voltage (Note 2)
Test No. 1 Per Figure 22a
Test No. 2 Per Figure 22b
Test No. 3 Per Figure 22c
(for 1 sec, R.H. < 30%, T_A = 25_C)
Total Device Dissipation @ T_C = 25_C
MJE18004
MJF18004
Derate above 25°C
MJE18004
MJF18004
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Symbol
V_CEO
V_CES
V_EBO
I_C
I_CM
I_B
I_BM
V_ISOL
P_D
T_J, T_stg
Value Unit
450
Vdc
1000
Vdc
9.0
Vdc
5.0
Adc
10
2.0
Adc
4.0
MJF18004 V
4500
3500
1500
75
35
0.6
0.28
−65 to 150
W
W/_C
_C
Characteristics
Thermal Resistance, Junction−to−Case
MJE18004
MJF18004
Symbol
R_qJC
Max
Unit
_C/W
1.65
3.55
Thermal Resistance, Junction−to−Ambient R_qJA
62.5
_C/W
Maximum Lead Temperature for Soldering
T_L
Purposes 1/8″ from Case for 5 Seconds
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
2. Proper strike and creepage distance must be provided.
http://onsemi.com
POWER TRANSISTOR
5.0 AMPERES
1000 VOLTS
35 and 75 WATTS
MARKING
DIAGRAMS
123
TO−220AB
CASE 221A−09
STYLE 1
MJE18004G
AYWW
1
2
3
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
MJF18004G
AYWW
G
= Pb−Free Package
A
= Assembly Location
Y
= Year
WW
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
April, 2010 − Rev. 9
Publication Order Number:
MJE18004/D