MJE18004G Datasheet, PDF (5/11 Pages) ON Semiconductor – NPN Bipolar Power Transistor For Switching Power Supply Applications

MJE18004G, MJF18004G
TYPICAL SWITCHING CHARACTERISTICS
(I_B2 = I_C/2 for all switching)
1800
1600
I_B(off) = I_C/2
V_CC = 300 V
1400 PW = 20 ms
T_J = 25°C
T_J = 125°C
1200
1000
I_C/I_B = 10
800
I_C/I_B = 5
600
400
200
0
0
1
2
3
4
5
I_C, COLLECTOR CURRENT (AMPS)
Figure 7. Resistive Switching, t_on
3000 _{IC/IB = 5}
2500
2000
I_C/I_B = 10
1500
T_J = 25°C
T_J = 125°C
I_B(off) = I_C/2
V_CC = 300 V
PW = 20 ms
1000
500
0
0
1
2
3
4
5
I_C, COLLECTOR CURRENT (AMPS)
Figure 8. Resistive Switching, t_off
3500
3000
2500
2000
1500
1000
500
0
0
3500
V_Z = 300 V
I_C/I_B = 5
V_CC = 15 V
I_B(off) = I_C/2
3000
L_C = 200 mH
2500
T_J = 25°C
T_J = 125°C
V_Z = 300 V
V_CC = 15 V
I_B(off) = I_C/2
L_C = 200 mH
2000
I_C = 2 A
1500
T_J = 25°C
T_J = 125°C
I_C/I_B = 10
1
2
3
4
I_C COLLECTOR CURRENT (AMPS)
Figure 9. Inductive Storage Time, t_si
1000
I_C = 1 A
500
5
3 4 5 6 7 8 9 10 11 12 13 14 15
h_FE, FORCED GAIN
Figure 10. Inductive Storage Time, t_si(h_FE)
300
250
200
t_fi
t_c
150
100
V_Z = 300 V
50
V_CC = 15 V
I_B(off) = I_C/2
L_C = 200 mH
T_J = 25°C
T_J = 125°C
0
0
1
2
3
4
5
I_C, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, t_c and t_fi, I_C/I_B = 5
250
T_J = 25°C
T_J = 125°C
200
150
t_c
100
V_Z = 300 V
50 V_CC = 15 V
I_B(off) = I_C/2
0 ^{LC = 200 mH}
t_fi
0
1
2
3
4
5
I_C, COLLECTOR CURRENT (AMPS)
Figure 12. Inductive Switching, t_c and t_fi, I_C/I_B = 10
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