MBT3946DW1T1G Datasheet, PDF (7/10 Pages) ON Semiconductor – Dual General Purpose Transistor

+0.5 V
10.6 V
MBT3946DW1T1G
(PNP)
< 1 ns
10 k
300 ns
DUTY CYCLE = 2%
3V
275
+9.1 V
0
C_s < 4 pF*
10 < t₁ < 500 ms
t₁
DUTY CYCLE = 2%
< 1 ns
10.9 V
10 k
1N916
3V
275
C_s < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 19. Delay and Rise Time
Equivalent Test Circuit
Figure 20. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
(PNP)
5.0
C_obo
C_ibo
3.0
2.0
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
Figure 21. Capacitance
20 30 40
T_J = 25°C
T_J = 125°C
5000
3000 ^{VCC = 40 V}
2000 ^{IC/IB = 10}
(PNP)
1000
700
500
300
200
100
70
50
1.0
Q_T
Q_A
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 22. Charge Data
500
300
200
100
70
50
30
20
10
7
5
1.0
(PNP)
I_C/I_B = 10
t_r @ V_CC = 3.0 V
15 V
40 V
t_d @ V_OB = 0 V
2.0 V
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 23. Turn −On Time
500
300
200
100
70
50
30
20
10
7
5
1.0
(PNP)
I_C/I_B = 20
V_CC = 40 V
I_B1 = I_B2
I_C/I_B = 10
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 24. Fall Time
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