MBT3946DW1T1G Datasheet, PDF (3/10 Pages) ON Semiconductor – Dual General Purpose Transistor

MBT3946DW1T1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Output Admittance
(V_CE = 10 Vdc, I_C = 1.0 mAdc, f = 1.0 kHz)
(V_CE = −10 Vdc, I_C = −1.0 mAdc, f = 1.0 kHz)
h_oe
(NPN)
(PNP)
Noise Figure
(V_CE = 5.0 Vdc, I_C = 100 mAdc, R_S = 1.0 kW, f = 1.0 kHz)
(V_CE = −5.0 Vdc, I_C = −100 mAdc, R_S = 1.0 kW, f = 1.0 kHz)
NF
(NPN)
(PNP)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V_CC = 3.0 Vdc, V_BE = − 0.5 Vdc)
(V_CC = −3.0 Vdc, V_BE = 0.5 Vdc)
(I_C = 10 mAdc, I_B1 = 1.0 mAdc)
(I_C = −10 mAdc, I_B1 = −1.0 mAdc)
(V_CC = 3.0 Vdc, I_C = 10 mAdc)
(V_CC = −3.0 Vdc, I_C = −10 mAdc)
(I_B1 = I_B2 = 1.0 mAdc)
(I_B1 = I_B2 = −1.0 mAdc)
(NPN)
t_d
(PNP)
(NPN)
t_r
(PNP)
(NPN)
t_s
(PNP)
(NPN)
t_f
(PNP)
Min
Max
Unit
mmhos
1.0
40
3.0
60
dB
−
5.0
−
4.0
−
35
−
35
ns
−
35
−
35
−
200
−
225
ns
−
50
−
75
(NPN)
DUTY CYCLE = 2%
300 ns
+10.9 V
+3 V
275
10 < t₁ < 500 ms
t₁
DUTY CYCLE = 2%
+10.9 V
+3 V
275
- 0.5 V
10 k
< 1 ns
0
C_s < 4 pF*
10 k
1N916
C_s < 4 pF*
- 9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
(NPN)
7.0
5.0
C_ibo
3.0
2.0
C_obo
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
20 30 40
T_J = 25°C
T_J = 125°C
5000
3000 ^{VCC = 40 V}
2000 ^{IC/IB = 10}
(NPN)
1000
700
500
300
200
100
70
50
1.0
Q_T
Q_A
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
I_C, COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
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