MBT3946DW1T1G Datasheet, PDF (2/10 Pages) ON Semiconductor – Dual General Purpose Transistor

MBT3946DW1T1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(I_C = 1.0 mAdc, I_B = 0)
(I_C = −1.0 mAdc, I_B = 0)
Collector −Base Breakdown Voltage
(I_C = 10 mAdc, I_E = 0)
(I_C = −10 mAdc, I_E = 0)
Emitter −Base Breakdown Voltage
(I_E = 10 mAdc, I_C = 0)
(I_E = −10 mAdc, I_C = 0)
Base Cutoff Current
(V_CE = 30 Vdc, V_EB = 3.0 Vdc)
(V_CE = −30 Vdc, V_EB = −3.0 Vdc)
Collector Cutoff Current
(V_CE = 30 Vdc, V_EB = 3.0 Vdc)
(V_CE = −30 Vdc, V_EB = −3.0 Vdc)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I_C = 0.1 mAdc, V_CE = 1.0 Vdc)
(I_C = 1.0 mAdc, V_CE = 1.0 Vdc)
(I_C = 10 mAdc, V_CE = 1.0 Vdc)
(I_C = 50 mAdc, V_CE = 1.0 Vdc)
(I_C = 100 mAdc, V_CE = 1.0 Vdc)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(I_C = −0.1 mAdc, V_CE = −1.0 Vdc)
(I_C = −1.0 mAdc, V_CE = −1.0 Vdc)
(I_C = −10 mAdc, V_CE = −1.0 Vdc)
(I_C = −50 mAdc, V_CE = −1.0 Vdc)
(I_C = −100 mAdc, V_CE = −1.0 Vdc)
Collector −Emitter Saturation Voltage
(I_C = 10 mAdc, I_B = 1.0 mAdc)
(I_C = 50 mAdc, I_B = 5.0 mAdc)
(PNP)
(NPN)
(I_C = −10 mAdc, I_B = −1.0 mAdc)
(I_C = −50 mAdc, I_B = −5.0 mAdc)
Base −Emitter Saturation Voltage
(I_C = 10 mAdc, I_B = 1.0 mAdc)
(I_C = 50 mAdc, I_B = 5.0 mAdc)
(PNP)
(NPN)
(I_C = −10 mAdc, I_B = −1.0 mAdc)
(I_C = −50 mAdc, I_B = −5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I_C = 10 mAdc, V_CE = 20 Vdc, f = 100 MHz)
(I_C = −10 mAdc, V_CE = −20 Vdc, f = 100 MHz)
Output Capacitance
(V_CB = 5.0 Vdc, I_E = 0, f = 1.0 MHz)
(V_CB = −5.0 Vdc, I_E = 0, f = 1.0 MHz)
Input Capacitance
(V_EB = 0.5 Vdc, I_C = 0, f = 1.0 MHz)
(V_EB = −0.5 Vdc, I_C = 0, f = 1.0 MHz)
Input Impedance
(V_CE = 10 Vdc, I_C = 1.0 mAdc, f = 1.0 kHz)
(V_CE = −10 Vdc, I_C = −1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V_CE = 10 Vdc, I_C = 1.0 mAdc, f = 1.0 kHz)
(V_CE = −10 Vdc, I_C = −1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(V_CE = 10 Vdc, I_C = 1.0 mAdc, f = 1.0 kHz)
(V_CE = −10 Vdc, I_C = −1.0 mAdc, f = 1.0 kHz)
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
Symbol
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_BL
I_CEX
h_FE
V_CE(sat)
V_BE(sat)
f_T
C_obo
C_ibo
h_ie
h_re
h_fe
http://onsemi.com
2
Min
Max
Unit
Vdc
40
−
−40
−
Vdc
60
−
−40
−
Vdc
6.0
−
−5.0
−
nAdc
−
50
−
−50
nAdc
−
50
−
−50
−
40
−
70
−
100
300
60
−
30
−
60
−
80
−
100
300
60
−
30
−
Vdc
−
0.2
−
0.3
−
−0.25
−
−0.4
Vdc
0.65
0.85
−
0.95
−0.65
−
−0.85
−0.95
MHz
300
−
250
−
pF
−
4.0
−
4.5
pF
−
8.0
−
10.0
kW
1.0
10
2.0
12
X 10^{− 4}
0.5
8.0
0.1
10
−
100
400
100
400