MBT3946DW1T1G Datasheet, PDF (5/10 Pages) ON Semiconductor – Dual General Purpose Transistor

MBT3946DW1T1G
(NPN)
h PARAMETERS
(V_CE = 10 Vdc, f = 1.0 kHz, T_A = 25°C)
300
100
(NPN)
50
(NPN)
200
20
100
10
70
5
50
2
30
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
I_C, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
1
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
I_C, COLLECTOR CURRENT (mA)
Figure 12. Output Admittance
20
10
(NPN)
5.0
2.0
1.0
0.5
0.2
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
I_C, COLLECTOR CURRENT (mA)
Figure 13. Input Impedance
10
7.0
(NPN)
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
I_C, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
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