DTA114E Datasheet, PDF (7/8 Pages) ON Semiconductor – PNP SILICON BIAS RESISTOR TRANSISTOR

DTA114E SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
DTA114Y
1
I_C/I_B = 10
0.1
0.01
T_A = –25°C
25°C
75°C
0.001 ₀
20
40
60
80
I_C, COLLECTOR CURRENT (mA)
Figure 17. V_CE(sat) versus I_C
180
160 ^VCE ^{= 10 V}
140
120
T_A = 75°C
25°C
–25°C
100
80
60
40
20
0
1 2 4 6 8 10 15 20 40 50 60 70 80 90 100
I_C, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
4.5
4
f = 1 MHz
3.5
l_E = 0 V
T_A = 25°C
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8 10 15 20 25 30 35 40 45 50
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
100
T_A = 75°C
10
25°C
–25°C
V_O = 5 V
1
0
2
4
6
8
10
V_in, INPUT VOLTAGE (VOLTS)
Figure 20. Output Current versus Input Voltage
10
V_O = 0.2 V
1
T_A = –25°C
25°C
75°C
+12 V
Typical Application
for PNP BRTs
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
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Figure 22. Inexpensive, Unregulated Current Source
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