DTA114E Datasheet, PDF (6/8 Pages) ON Semiconductor – PNP SILICON BIAS RESISTOR TRANSISTOR

1
I_C/I_B = 10
0.1
DTA114E SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
DTA144E
1000
T_A = –25°C _25°C
75°C
100
T_A = 75°C
25°C
–25°C
0.01
0
1
0.8
0.6
0.4
0.2
0
0
10
20
30
I_C, COLLECTOR CURRENT (mA)
Figure 12. V_CE(sat) versus I_C
40
10
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
100
f = 1 MHz
l_E = 0 V
T_A = 25°C
10
1
T_A = 75°C
25°C
–25°C
10
20
30
40
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
0.1
0.01
V_O = 5 V
0.001
50
0 1 2 3 4 5 6 7 8 9 10
V_in, INPUT VOLTAGE (VOLTS)
Figure 15. Output Current versus Input Voltage
100
V_O = 2 V
T_A = –25°C
25°C
10
75°C
1
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
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