DTA114E Datasheet, PDF (4/8 Pages) ON Semiconductor – PNP SILICON BIAS RESISTOR TRANSISTOR

250
200
150
100
50
0
–50
1000
100
DTA114E SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
DTA114E
R_θJA = 625°C/W
1
I_C/I_B = 10
0.1
T_A = –25°C
25°C
75°C
0
50
100
150
T_A, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
V_CE = 10 V
T_A = 75°C
25°C
–25°C
0.01
0
4
3
2
1
20
40
60
80
I_C, COLLECTOR CURRENT (mA)
Figure 2. V_CE(sat) versus I_C
f = 1 MHz
l_E = 0 V
T_A = 25°C
10
1
10
100
0
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
75°C
25°C
10
T_A = –25°C
1
0.1
0.01
0.001
01
V_O = 5 V
2 3 4 5 6 7 8 9 10
V_in, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
100
V_O = 0.2 V
10
1
T_A = –25°C
25°C
75°C
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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