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DTA114E Datasheet, PDF (2/8 Pages) ON Semiconductor – PNP SILICON BIAS RESISTOR TRANSISTOR
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DTA114E SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (VCB = 50 V, IE = 0)
Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter–Base Cutoff Current
(VEB = 6.0 V, IC = 0)
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
ICBO
—
ICEO
—
IEBO
—
—
—
—
—
—
—
—
—
—
—
100
nAdc
—
500
nAdc
—
0.5
mAdc
—
0.2
—
0.1
—
0.2
—
0.9
—
1.9
—
4.3
—
2.3
—
1.5
—
0.18
Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
50
—
—
Vdc
Collector–Emitter Breakdown Voltage (2.) (IC = 2.0 mA, IB = 0) V(BR)CEO
50
—
—
Vdc
ON CHARACTERISTICS (2.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
hFE
35
60
—
60
100
—
80
140
—
80
140
—
160
250
—
160
250
—
3.0
5.0
—
8.0
15
—
15
27
—
80
140
—
Collector–Emitter Saturation Voltage
(IC = 10 mA, IE = 0.3 mA) DTA144E/DTA114Y
(IC = 10 mA, IE = 0.3 mA) DTB113E/DTA143E
(IC = 10 mA, IB = 5 mA) DTA123E
(IC = 10 mA, IB = 1 mA) DTA114T/DTA143T/
(IC = 10 mA, IB = 1 mA) DTA143Z/DTA124E
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
DTA114E
DTA124E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA144E
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
VCE(sat)
—
VOL
—
—
—
—
—
—
—
—
—
—
—
0.25
Vdc
Vdc
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
—
0.2
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