DTA114E Datasheet, PDF (1/8 Pages) ON Semiconductor – PNP SILICON BIAS RESISTOR TRANSISTOR

DTA114E SERIES
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO–92
package which is designed for through hole applications.
http://onsemi.com
PNP SILICON
BIAS RESISTOR
TRANSISTOR
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation
@ T_A = 25°C ^(1.)
Derate above 25°C
V_CBO
V_CEO
I_C
P_D
50
Vdc
50
Vdc
100
mAdc
350
mW
2.81
mW/°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to
Ambient (surface mounted)
R_θJA
357
°C/W
Operating and Storage
Temperature Range
T_J, T_stg
–55 to
°C
+150
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
T_L
260
°C
10
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
DTA114E
DTA114E
10
10
DTA124E
DTA124E
22
22
DTA144E
DTA144E
47
47
DTA114Y
DTA114Y
10
47
DTA114T
DTA114T
10
∞
DTA143T
DTA143T
4.7
∞
DTB113E
DTB113E
1.0
1.0
DTA123E
DTA123E
2.2
2.2
DTA143E
DTA143E
4.7
4.7
DTA143Z
DTA143Z
4.7
47
5000/Box
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
CASE 29
TO–92 (TO–226)
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
May, 2000 – Rev. 0
Publication Order Number:
DTA114E/D