MMDFS6N303 Datasheet, PDF (6/11 Pages) ON Semiconductor – N-Channel SO-8 Power MOSFET

MMDFS6N303
TYPICAL FET ELECTRICAL CHARACTERISTICS
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0106 W 0.0431 W 0.1643 W 0.3507 W 0.4302 W
CHIP
JUNCTION _{0.0253 F 0.1406 F 0.5064 F 2.9468 F 177.14 F}
0.001
0.00001
SINGLE PULSE
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 13. FET Thermal Response
AMBIENT
10
100
1000
I_S
t_p
di/dt
t_rr
t_a
t_b
0.25 I_S
I_S
TIME
Figure 14. Diode Reverse Recovery Waveform
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
10
85°C
10
25°C
85°C
T_J = 125°C
1.0
−40 °C
T_J = 125°C
25°C
1.0
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V_F, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 15. Typical Forward Voltage
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V_F, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 16. Maximum Forward Voltage
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