MMDFS6N303 Datasheet, PDF (3/11 Pages) ON Semiconductor – N-Channel SO-8 Power MOSFET

MMDFS6N303
MOSFET ELECTRICAL CHARACTERISTICS − continued (T_C = 25°C unless otherwise noted) (Note 7)
Characteristic
Symbol
Min
Typ
Max
SWITCHING CHARACTERISTICS (Note 8)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t_d(on)
—
8.2
16.5
(V_DD = 15 Vdc, I_D = 1.0 Adc,
t_r
—
8.5
17
V_GS = 10 Vdc,
R_G = 6.0 Ω)
t_d(off)
—
89.6
179
t_f
—
61.1
122
Gate Charge
Q_T
—
15.7
31.4
(V_DS = 15 Vdc, I_D = 5.0 Adc,
Q₁
—
2.0
—
V_GS = 10 Vdc)
Q₂
—
4.6
—
Q₃
—
3.9
—
DRAIN SOURCE DIODE CHARACTERISTICS
Forward On−Voltage (Note 7)
(I_S = 1.7 Adc,
V_GS = 0 Vdc)
V_SD
—
0.77
1.2
Reverse Recovery Time
t_rr
—
54.5
—
(V_GS = 0 V, I_S = 5.0 A,
dIS/dt = 100 A/ms)
t_a
—
14.8
—
t_b
—
39.7
—
Reverse Recovery Stored Charge
Q_RR
—
0.048
—
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
Maximum Instantaneous Forward Voltage (Note 7)
I_F = 100 mAdc
I_F = 3.0 Adc
I_F = 6.0 Adc
V_F
T_J = 25°C
0.28
0.42
0.50
T_J = 125°C
0.13
0.33
0.45
Maximum Instantaneous Reverse Current (Note 7)
V_R = 30 V
I_R
T_J = 25°C
T_J = 125°C
250
—
—
25
Maximum Voltage Rate of Change
V_R = 30 V
dV/dt
7. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
8. Switching characteristics are independent of operating junction temperature.
10,000
Unit
ns
nC
Vdc
ns
mC
Volts
mA
mA
V/ms
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