MMDFS6N303 Datasheet, PDF (5/11 Pages) ON Semiconductor – N-Channel SO-8 Power MOSFET

MMDFS6N303
TYPICAL FET ELECTRICAL CHARACTERISTICS
V_DS = 0 V_GS = 0
1200
C_iss
1000
T_J = 25°C
800
C_rss
600
C_iss
400
C_oss
200
C_rss
0
−10 −5.0 0 5.0 10 15 20 25 30
V_GS V_DS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
t_d(off)
100
t_f
t_r
10
t_d(on)
12
30
Q_T
10
8.0
Q1
Q2
6.0
20
V_GS
4.0
I_D = 5.0 A
10
2.0
0
0
Q3
4.0
V_DS
8.0
T_J = 25°C
0
12
16
Q_G, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and
Drain−To−Source Voltage versus Total Charge
5.0
V_GS = 0 V
4.0
T_J = 25°C
3.0
2.0
1.0
1.0
1.0
10
100
R_G, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100 _{Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided)}
with one die operating,
10 s max.
1.0 ms
10
10 ms
1.0 ^VGS ^{= 12 V}
dc
SINGLE PULSE
T_C = 25°C
0.1
R_DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
10
100
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
0.5
0.6
0.7
0.8
0.9
V_SD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
350
300
I_D = 6.0 A
250
200
150
100
50
0
25
50
75
100
125
150
T_J, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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