MMDFS6N303 Datasheet, PDF (4/11 Pages) ON Semiconductor – N-Channel SO-8 Power MOSFET

MMDFS6N303
TYPICAL FET ELECTRICAL CHARACTERISTICS
12
10 V
10
8.0
6.0
4.5 V 3.9 V
T_J = 25°C
3.5 V
3.3 V
12
V_DS ≥ 10 V
10
8.0
6.0
25°C
4.0
4.0
125°C
2.0
V_GS = 2.9 V
2.0
T_J = − 55°C
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0
1.5
2.5
3.5
4.5
5.5
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.3
0.05
T_J = 25°C
T_J = 25°C
I_D = 6.0 A
V_GS = 4.5 V
0.2
0.04
0.1
0.03
10 V
0
2.0
4.0
6.0
8.0
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
1.8
V_GS = 10 V
I_D = 6.0 A
1.4
1.0
0.6
0.02
10
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1000
V_GS = 0 V
100
T_J = 125°C
10
100°C
0.2
−50 −25
0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1.0
0
5.0
10
15
20
25
30
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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