MMDFS6N303 Datasheet, PDF (2/11 Pages) ON Semiconductor – N-Channel SO-8 Power MOSFET

MMDFS6N303
SCHOTTKY RECTIFIER MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
V_RRM
V_R
Average Forward Current (Note 3)
I_O
(Rated V_R) T_A = 104°C
Peak Repetitive Forward Current (Note 3)
I_frm
(Rated V_R, Square Wave, 20 kHz) T_A = 108°C
Non−Repetitive Peak Surge Current
I_fsm
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
THERMAL CHARACTERISTICS — SCHOTTKY AND MOSFET
Thermal Resistance — Junction−to−Ambient (Note 4) — MOSFET
Thermal Resistance — Junction−to−Ambient (Note 5) — MOSFET
Thermal Resistance — Junction−to−Ambient (Note 2) — MOSFET
Thermal Resistance — Junction−to−Ambient (Note 4) — Schottky
Thermal Resistance — Junction−to−Ambient (Note 5) — Schottky
Thermal Resistance — Junction−to−Ambient (Note 3) — Schottky
Operating and Storage Temperature Range
R_qJA
R_qJA
R_qJA
R_qJA
R_qJA
R_qJA
T_j, T_stg
MOSFET ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted) (Note 6)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−Source Voltage
(V_GS = 0 Vdc, I_D = 0.25 mA)
Temperature Coefficient (Positive)
V_(BR)DSS
30
—
Zero Gate Drain Current
(V_DS = 24 Vdc, V_GS = 0 Vdc)
(V_DS = 24 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate Body Leakage Current (V_GS = ± 20 Vdc, V_DS = 0)
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 0.25 mA)
Temperature Coefficient (Negative)
I_DSS
—
—
I_GSS
—
V_GS(th)
1.0
—
Static Drain−Source Resistance
(V_GS = 10 Vdc, I_D = 5.0 Adc)
(V_GS = 4.5 Vdc, I_D = 3.9 Adc)
R_DS(on)
—
—
Forward Transconductance (V_DS = 15 Vdc, I_D = 5.0 Adc)
g_FS
—
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
C_iss
—
(V_DS = 24 Vdc, V_GS = 0 Vdc,
f = 1.0 MHz)
C_oss
—
Reverse Transfer Capacitance
C_rss
—
3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
4. Mounted with minimum recommended pad size, PC Board FR4.
5. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State.
6. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
30
Volts
Amps
2.0
Amps
4.0
30
Amps
167
97
62.5
197
97
62.5
−55 to 150
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
mV/°C
mAdc
—
1.0
—
20
—
100
nAdc
Vdc
—
—
—
—
mW
28
35
42
50
9.0
—
mhos
430
600
pF
217
300
67.5
135
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