MMDF2N02E Datasheet, PDF (6/7 Pages) Motorola, Inc – DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS

MMDF2N02E
100
V_GS = 20 V
SINGLE PULSE
T_C = 25°C
10
Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one die operating, 10s max.
100 ms ^{10 ms}
10 ms
1
dc
0.1
0.01
0.1
R_DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
100
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
280
I pk = 9 A
240
200
160
120
80
40
0
25
50
75
100
125
150
T_J, STARTING JUNCTION TEMPERATURE (°C)
Figure 13. Maximum Avalanche Energy versus
Starting Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
10
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
1.0E−05
SINGLE PULSE
1.0E−04
1.0E−03
Normalized to qja at 10s.
Chip 0.0175 W 0.0710 W 0.2706 W 0.5776 W 0.7086 W
0.0154 F 0.0854 F
0.3074 F 1.7891 F
107.55 F _Ambient
1.0E−02
1.0E−01
t, TIME (s)
1.0E+00
Figure 14. Thermal Response
1.0E+01
1.0E+02
1.0E+03
I_S
t_p
di/dt
t_rr
t_a
t_b
0.25 I_S
I_S
TIME
Figure 15. Diode Reverse Recovery Waveform
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