MMDF2N02E Datasheet, PDF (2/7 Pages) Motorola, Inc – DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS

MMDF2N02E
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 250 mAdc)
Zero Gate Voltage Drain Current
(V_DS = 20 Vdc, V_GS = 0 Vdc)
(V_DS = 20 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate−Body Leakage Current (V_GS = ± 20 Vdc, V_DS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 mAdc
Static Drain−to−Source On−Resistance
(V_GS = 10 Vdc, I_D = 2.2 Adc)
(V_GS = 4.5 Vdc, I_D = 1.0 Adc)
Forward Transconductance (V_DS = 3.0 Vdc, I_D = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V_DS = 16 Vdc, V_GS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(V_DD = 10 Vdc, I_D = 2.0 Adc,
V_GS = 10 Vdc, R_G = 6.0 W)
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(V_DD = 10 Vdc, I_D = 2.0 Adc,
V_GS = 4.5 Vdc, R_G = 9.1 W)
Fall Time
Gate Charge
(V_DS = 16 Vdc, I_D = 2.0 Adc,
V_GS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 2)
(I_S = 2.0 Adc, V_GS = 0 Vdc)
Reverse Recovery Time
See Figure 11
(I_S = 2.0 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/ms)
Reverse Recovery Storage Charge
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
R_DS(on)
g_FS
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
Q_T
Q₁
Q₂
Q₃
V_SD
t_rr
t_a
t_b
Q_RR
Min
Typ
Max
Unit
Vdc
25
−
−
mAdc
−
−
1.0
−
−
10
−
−
100
nAdc
Vdc
1.0
2.0
3.0
W
−
0.083 0.100
−
0.110 0.200
1.0
2.6
−
Mhos
−
380
532
pF
−
235
329
−
55
110
−
7.0
21
ns
−
17
30
−
27
48
−
18
30
−
10
30
−
35
70
−
19
38
−
25
50
−
10.6
30
nC
−
1.3
−
−
2.9
−
−
2.7
−
−
1.0
1.4
Vdc
−
34
66
ns
−
17
−
−
17
−
−
0.03
−
mC
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