MMDF2N02E Datasheet, PDF (4/7 Pages) Motorola, Inc – DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS

MMDF2N02E
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (Dt)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain−gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (I_G(AV)) can be made from a
rudimentary analysis of the drive circuit so that:
t = Q/I_G(AV)
During the rise and fall time interval when switching a
resistive load, V_GS remains virtually constant at a level
known as the plateau voltage, V_SGP. Therefore, rise and fall
times may be approximated by the following:
t_r = Q₂ x R_G/(V_GG − V_GSP)
t_f = Q₂ x R_G/V_GSP
where
V_GG = the gate drive voltage, which varies from zero to V_GG
R_G = the gate drive resistance and Q₂ and V_GSP are read
from the gate charge curve.
During the turn−on and turn−off delay times, gate current
is not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
t_d(on) = R_G C_iss In [V_GG/(V_GG − V_GSP)]
t_d(off) = R_G C_iss In (V_GG/V_GSP)
The capacitance (C_iss) is read from the capacitance curve
at a voltage corresponding to the off−state condition when
calculating t_d(on) and is read at a voltage corresponding to the
on−state when calculating t_d(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
1200
V_DS = 0 V
1000 _Ciss
800
V_GS = 0 V
T_J = 25°C
600 ^Crss
400
C_iss
C_oss
200
C_rss
0
10
5
0
5
V_GS
V_DS
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
12
16
QT
9
V_DS
V_GS
12
6
8
Q1
Q2
3
4
Q3
I_D = 2.3 A
T_J = 25°C
0
0
0
2
4
6
8
10
12
Q_g, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
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