MMDF2N02E Datasheet, PDF (1/7 Pages) Motorola, Inc – DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS

MMDF2N02E
Power MOSFET
2 Amps, 25 Volts
N−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a low reverse recovery time. MiniMOSt
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc−dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Features
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Is Characterized for Use In Bridge Circuits
• I_DSS Specified at Elevated Temperatures
• Avalanche Energy Specified
• Mounting Information for SO−8 Package Provided
• Pb−Free Package is Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T_A = 25°C
Drain Current − Continuous @ T_A = 100°C
Drain Current − Single Pulse (t_p ≤ 10 ms)
Total Power Dissipation @ T_A = 25°C (Note 1)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C (V_DD = 20 Vdc,
V_GS = 10 Vdc, Peak I_L = 9.0 Apk,
L = 6.0 mH, R_G = 25 W)
Thermal Resistance, Junction−to−Ambient
(Note 1)
V_DSS
V_GS
I_D
I_D
I_DM
P_D
T_J, T_stg
E_AS
R_qJA
25
Vdc
± 20
Vdc
3.6
Adc
2.5
18
Apk
2.0
W
−55 to 150 °C
245
mJ
62.5 °C/W
Maximum Lead Temperature for Soldering
T_L
Purposes, 0.0625″ from case for 10 seconds
260
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES, 25 VOLTS
R_DS(on) = 100 mW
N−Channel
D
Discrete
(Pb−Free)
G
S
MARKING
DIAGRAM
8
1
SO−8
CASE 751
STYLE 11
8
F2N02
AYWWG
G
1
F2N02
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
1 8 ^Drain−1
2 7 Drain−1
3 6 Drain−2
4 5 Drain−2
ORDERING INFORMATION
Device
Package
Shipping^†
MMDF2N02ER2
SO−8 2500 Tape & Reel
MMDF2N02ER2G SO−8 2500 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 7
Publication Order Number:
MMDFN02E/D