MMDF2N02E Datasheet, PDF (3/7 Pages) Motorola, Inc – DUAL TMOS MOSFET 3.6 AMPERES 25 VOLTS

MMDF2N02E
TYPICAL ELECTRICAL CHARACTERISTICS
7 _{VGS = 10 V}
6 ^{4.5 V}
4.3 V
3.9 V
5 _{4.1 V}
3.7 V
3.5 V
3.3 V
4
3.1 V
3
2.9 V
2
2.7 V
1
2.5 V
T_J = 25°C
0
0 0.25 0.5 0.75 1 1.25 1.5 1.75 2
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
7
V_DS ≥ 10 V
6 T_J = 25°C
5
4
100°C
3
25°C
2
1
T_J = −55°C
0
1.5
2
2.5
3
3.5
4
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.6
I_D = 3.5 A
0.5
T_J = 25°C
0.4
0.3
0.2
0.1
0
2
3
4
5
6
7
8
9 10
V_GS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
2.0
V_GS = 10 V
I_D = 3.5 A
1.5
0.15
T_J = 25°C
V_GS = 4.5
0.1
10 V
0.05
0
0
1
2
3
4
5
6
7
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
10000
V_GS = 0 V
1000
T_J = 125°C
100°C
1.0
100
25°C
0.5
10
0
−50 −25
0
25 50 75 100
T_J, JUNCTION TEMPERATURE (°C)
125 150
Figure 5. On−Resistance Variation with
Temperature
1
5
10
15
20
25
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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