CAT28F001G-12TE13 Datasheet, PDF (6/18 Pages) ON Semiconductor – 1 Megabit CMOS Boot Block Flash Memory

CAT28F001
A.C. CHARACTERISTICS, Program/Erase Operation
V_CC = +5V ±10%
JEDEC
Symbol
t_AVAV
tAVWH
tWHAX
tDVWH
t_WHDX
tELWL
t_WHEH
t_WLWH
t_WHWL
t_WHGL
tPHWL
tPHHWH
tVPWH
t_WHQV1
tWHQV2
t_WHQV3
t_WHQV4
t_QVVL
t_QVPH
tPHBR(1)
tGHHWL
tWHGH
Standard
Symbol
t_WC
t_AS
t_AH
tDS
tDH
t_CS
t_CH
t_WP
t_WPH
—
t_PS(1)
tPHS(1)
t_VPS(1)
—
—
—
—
t_VPH(1)
tPHH(1)
—
—
—
Parameter
Write Cycle Time
Address Setup to WE Going High
Address Hold Time from WE Going High
Data Setup Time to WE Going High
Data Hold Time from WE Going High
CE Setup Time to WE Going Low
CE Hold Time from WE Going High
WE Pulse Width
WE High Pulse Width
Write Recovery Time Before Read
RP High Recovery to WE Going Low
RP V_HH Setup to WE Going High
V_PP Setup to WE Going High
Duration of Programming Operations
Duration of Erase Operations (Boot)
Duration of Erase Operations (Parameter)
Duration of Erase Operations (Main)
V_PP Hold from Valid Status Reg Data
RP V_HH Hold from Status Reg Data
Boot Block Relock Delay
OE V_HH Setup to WE Going Low
OE V_HH Hold from WE High
28F001-90
Min Max
90
40
10
40
10
0
0
40
10
0
480
100
100
15
1.3
1.3
3
0
0
100
480
480
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
28F001-12
Min Max
120
40
10
40
10
0
0
40
10
0
480
100
100
15
1.3
1.3
3
0
0
100
480
480
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
µs
Sec
Sec
Sec
ns
ns
ns
ns
ns
Doc. No. MD-1078, Rev. K
6
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Characteristics subject to change without notice