 English |
|
|
|
|
|
|
|
| CAT28F001G-12TE13 Datasheet, PDF (4/18 Pages) ON Semiconductor – 1 Megabit CMOS Boot Block Flash Memory | |||
| |||
| ◁ |
CAT28F001
D.C. OPERATING CHARACTERISTICS
VCC = +5V ±10%, unless otherwise specified
Symbol
ILI
Parameter
Input Leakage Current
Limits
Min.
Max.
Unit
±1.0
µA
ILO
Output Leakage Current
±10
µA
ISB1
VCC Standby Current CMOS
100
µA
ISB2
VCC Standby Current TTL
IPPD
VPP Deep Powerdown Current
ICC1
VCC Active Read Current
1.5
mA
1.0
µA
30
mA
ICC2(1) VCC Programming Current
20
mA
ICC3(1) VCC Erase Current
20
mA
IPPS
VPP Standby Current
IPP1
IPP2(1)
VPP Read Current
VPP Programming Current
±10
µA
200
µA
200
µA
30
mA
IPP3(1) VPP Erase Current
30
mA
VIL
Input Low Level
â0.5
0.8
V
VOL
Output Low Level
0.45
V
VIH
Input High Level
2.0
VCC+0.5
V
VOH
Output High Level
2.4
V
VID
A9 Signature Voltage
11.5
13.0
V
IID
A9 Signature Current
500
µA
ICCD
VCC Deep Powerdown Current
1.0
µA
ICCES VCC Erase Suspend Current
10
mA
IPPES VPP Erase Suspend Current
300
µA
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
Test Conditions
VIN = VCC or VSS
VCC = 5.5V
VOUT = VCC or VSS,
VCC = 5.5V
CE = VCC ±0.2V = RP
VCC = 5.5V
CE = RP = VIH, VCC = 5.5V
RP = GND±0.2V
VCC = 5.5V, CE = VIL,
IOUT = 0mA, f = 8 MHz
VCC = 5.5V,
Programming in Progress
VCC = 5.5V,
Erase in Progress
VPP < VCC
VPP > VCC
VPP = VPPH
VPP = VPPH,
Programming in Progress
VPP = VPPH,
Erase in Progress
IOL = 5.8mA, VCC = 4.5V
IOH = 2.5mA, VCC = 4.5V
A9 = VID
A9 = VID
RP = GND±0.2V
Erase Suspended CE = VIH
Erase Suspended VPP=VPPH
Doc. No. MD-1078, Rev. K
4
© 2008 SCILLC. All rights reserved.
Characteristics subject to change without notice
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese