NSS60100DMT Datasheet, PDF (5/6 Pages) ON Semiconductor – 60 V, 1 A, Low VCE(sat) PNP Transistors

100
Duty Cycle = 0.5
0.20
10 _0.10
0.05
0.02
1 ^0.01
NSS60100DMT
TYPICAL CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125 150
TEMPERATURE (°C)
Figure 13. Power Derating
Single Pulse
0.1
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (sec)
Figure 14. Thermal Resistance by Transistor
100
Duty Cycle = 0.5
0.20
10
0.10
0.05
0.02
1 _0.01
Single Pulse
0.1
0.000001 0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (sec)
Figure 15. Thermal Resistance for Both Transistors
100
1000
100
1000
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