NSS60100DMT Datasheet, PDF (4/6 Pages) ON Semiconductor – 60 V, 1 A, Low VCE(sat) PNP Transistors

NSS60100DMT
TYPICAL CHARACTERISTICS
1.0
−55°C
25°C
0.5 ^100°C
150°C
I_C/I_B = 20
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 7. Base−Emitter Saturation Voltage
1.2
1.0
0.8 ^{−55°C}
25°C
0.6
100°C
0.4
150°C
0.2
V_CE = 2 V
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter “ON” Voltage
1.0
0.9
T_A = 25°C
0.8
0.7
0.6
0.5
I_C = 2.0 A
0.4
0.3
0.2
0.1
0
0.0001
0.001
I_C = 1.0 A
I_C = 0.5 A
I_C = 0.1 A
0.01
0.1
1
I_B, BASE CURRENT (A)
Figure 9. Collector Saturation Region
240
200
T_A = 25°C
f = 1 MHz
160
120
80
40
0
1
2
3
4
5
6
7
V_EB, BASE−EMITTER VOLTAGE (V)
Figure 10. Input Capacitance
50
1000
45
T_A = 25°C
T_J = 25°C
40
f = 1 MHz
V_CE = 2 V
f_test = 100 MHz
35
100
30
25
20
10
15
10
5
0
1
0
5
10
15
20
25
30
1
10
100
1000
V_CB, COLLECTOR−BASE VOLTAGE (V)
I_C, COLLECTOR CURRENT (mA)
Figure 11. Output Capacitance
Figure 12. f_T, Current Gain Bandwidth Product
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