NSS60100DMT Datasheet, PDF (3/6 Pages) ON Semiconductor – 60 V, 1 A, Low VCE(sat) PNP Transistors

NSS60100DMT
TYPICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
0
0.001
150°C
100°C
25°C
−55°C
V_CE = 2 V
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
400
350
300
250
200
150
100
50
0
0.001
150°C
100°C
25°C
−55°C
V_CE = 5 V
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
2.2
2.0
18 mA
1.8 16 mA
1.6
1.4
1.2
1.0
0.8
0.6
I_B = 20 mA
14 mA
12 mA
10 mA
8.0 mA
6.0 mA
4.0 mA
0.4
2.0 mA
0.2
0
0
1
2
3
4
5
6
V_CE, COLLECTOR EMITTER VOLTAGE (V)
Figure 3. Collector Current as a Function of
Collector Emitter Voltage
1
1
0.1
150°C
100°C
25°C
−55°C
0.01
0.001
0.01
0.1
I_C/I_B = 20
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
1
150°C
0.1
100°C
25°C
−55°C
I_C/I_B = 50
0.01
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
−55°C
150°C
0.1
25°C
100°C
I_C/I_B = 100
0.01
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 6. Collector−Emitter Saturation Voltage
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