NSS60100DMT Datasheet, PDF (2/6 Pages) ON Semiconductor – 60 V, 1 A, Low VCE(sat) PNP Transistors

NSS60100DMT
Table 1. ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I_C = −10 mA, I_B = 0)
Collector−Base Breakdown Voltage (Ic = −0.1 mA, I_E = 0)
Emitter−Base Breakdown Voltage (I_E = −0.1 mA, I_C = 0)
Collector Cutoff Current (V_CB = −60 V, I_E = 0)
Emitter Cutoff Current (V_BE = −5.0 V)
ON CHARACTERISTICS
V_(BR)CEO
−60
V_(BR)CBO
−80
V_(BR)EBO
−6
I_CBO
I_EBO
V
V
V
−100
nA
−100
nA
DC Current Gain (Note 4)
(I_C = −100 mA, V_CE = −2.0 V)
(I_C = −500 mA, V_CE = −2.0 V)
(I_C = −1 A, V_CE = −2.0 V)
(I_C = −2 A, V_CE = −2.0 V
Collector−Emitter Saturation Voltage (Note 4)
(I_C = −500 mA, I_B = −50 mA)
(I_C = −1 A, I_B = −50 mA)
(I_C = −1 A, I_B = −100 mA)
Base*Emitter Saturation Voltage (Note 4)
(I_C = −500 mA, I_B = −50 mA)
(I_C = −1 A, I_B = −50 mA)
(I_C = −1 A, I_B = −100 mA)
h_FE
V_CE(sat)
V_BE(sat)
150
230
120
180
90
140
40
80
V
−0.115 −0.160
−0.250 −0.350
−0.200 −0.300
V
−1.0
−1.0
−1.1
Base−Emitter Turn−on Voltage (Note 4)
(I_C = 500 mA, I_B = 50 mA)
V_BE(on)
−0.9
V
DYNAMIC CHARACTERISTICS
Output Capacitance
(V_CB = 10 V, f = 1.0 MHz)
C_obo
18
pF
Cutoff Frequency
(I_C = 50 mA, V_CE = 2.0 V, f = 100 MHz)
f_T
155
MHz
SWITCHING TIMES
Delay Time (V_CC = −10 V, I_C = −0.5 A, I_B1 = −25 mA, I_B2 = 25 mA)
t_d
15
ns
Rise Time (V_CC = −10 V, I_C = −0.5 A, I_B1 = −25 mA, I_B2 = 25 mA)
t_r
13
ns
Storage Time (V_CC = −10 V, I_C = −0.5 A, I_B1 = −25 mA, I_B2 = 25 mA)
t_s
360
ns
Fall Time (V_CC = −10 V, I_C = −0.5 A, I_B1 = −25 mA, I_B2 = 25 mA)
t_f
22
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
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