HN1B01FDW1T1 Datasheet, PDF (4/6 Pages) ON Semiconductor – Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

HN1B01FDW1T1
Typical Electrical Characteristics: NPN Transistor
280
6.0 mA
240
5.0 mA
3.0 mA
2.0 mA
200
1.0 mA
160
120
0.5 mA
80
I_B = 0.2 mA
40
0
T_A = 25°C
0
1
2
3
4
5
6
V_CE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 7. Collector Saturation Voltage
1000
T_A = 100°C
25°C
−25°C
100
V_CE = 1.0 V
10
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
1000
1000
T_A = 100°C
25°C
−25°C
100
1
I_C/I_B = 10
T_A = 100°C
0.1
25°C
−25°C
V_CE = 6.0 V
10
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 9. DC Current Gain
1000
0.01
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 10. V_CE(sat) versus I_C
1000
10
10,000
COMMON EMITTER
V_CE = 6 V
1000
25°C
T_A = 100°C
−25°C
100
1
10
T_A = 25°C
1
I_C/I_B = 10
0.1
0.1
1
10
100
1000
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
I_C, COLLECTOR CURRENT (mA)
V_BE, BASE−EMITTER VOLTAGE (V)
Figure 11. V_BE(sat) versus I_C
Figure 12. Base−Emitter Voltage
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