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| HN1B01FDW1T1 Datasheet, PDF (2/6 Pages) ON Semiconductor – Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount | |||
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HN1B01FDW1T1
Q1: PNP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
CollectorâEmitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
CollectorâBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
EmitterâBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
CollectorâBase Cutoff Current
(VCB = 45 Vdc, IE = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
CollectorâEmitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
CollectorâEmitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
ICEO
hFE
VCE(sat)
Q2: NPN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
CollectorâEmitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
CollectorâBase Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
EmitterâBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
CollectorâBase Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
CollectorâEmitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0, TA = 80°C)
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
ICEO
hFE
CollectorâEmitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
1. Pulse Test: Pulse Width ⤠300 ms, D.C. ⤠2%.
VCE(sat)
Min
â50
â60
â7.0
â
â
â
â
â200
â0.15
Min
50
60
7.0
â
â
â
â
200
0.15
Max
â
â
â
â0.1
â0.1
â2.0
â1.0
â400
â0.3
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
mAdc
â
Vdc
Max
Unit
â
Vdc
â
Vdc
â
Vdc
0.1
mAdc
0.1
mAdc
2.0
mAdc
1.0
mAdc
400
â
0.25
Vdc
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