HN1B01FDW1T1 Datasheet, PDF (3/6 Pages) ON Semiconductor – Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

HN1B01FDW1T1
Typical Electrical Characteristics: PNP Transistor
−200
−160
−2.0 mA
−1.5 mA
−1.0 mA
1000
T_A = 100°C
−120
−80
−40
0
0
−0.5 mA
I_B = −0.2 mA
T_A = 25°C
−1
−2
−3
−4
−5
−6
V_CE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Collector Saturation Region
25°C
−25°C
100
V_CE = −1.0 V
10
−1
−10
−100
I_C, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
−1000
1000
100
T_A = 100°C
25°C
−25°C
−1
I_C/I_B = 10
−0.1
25°C
T_A = 100°C
−25°C
V_CE = −6.0 V
10
−1
−10
−100
I_C, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
−0.01
−1000
−1
−10
−100
I_C, COLLECTOR CURRENT (mA)
Figure 4. V_CE(sat) versus I_C
−1000
−10
−1
−0.1
−1
−10,000
−1000
COMMON EMITTER
V_CE = 6 V
−100
T_A = 100°C
25°C
−25°C
−10
T_A = 25°C
I_C/I_B = 10
−10
−100
I_C, COLLECTOR CURRENT (mA)
Figure 5. V_BE(sat) versus I_C
−1000
−1
−0.1
0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.6 −0.7 −0.8 −0.9 −1
V_BE, BASE−EMITTER VOLTAGE (V)
Figure 6. Base−Emitter Voltage
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