HN1B01FDW1T1 Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount

HN1B01FDW1T1
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
Features
• High Voltage and High Current: V_CEO = 50 V, I_C = 200 mA
• High h_FE: h_FE = 200X400
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: 3A
− Machine Model: C
• Pb−Free Package is Available
http://onsemi.com
(6)
(5)
(4)
Q₁
Q₂
(1)
(2)
(3)
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V_(BR)CBO
60
Vdc
Collector−Emitter Voltage
V_(BR)CEO
50
Vdc
Emitter−Base Voltage
V_(BR)EBO
7.0
Vdc
Collector Current − Continuous
I_C
200
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature
P_D
380
mW
T_J
150
°C
T_stg
−55 to +150
°C
654
123
SC−74
CASE 318F
STYLE 3
MARKING DIAGRAM
R9 M
R9 = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package Shipping^†
HN1B01FDW1T1 SC−74 3000/Tape & Reel
HN1B01FDW1T1G SC−74 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 2
Publication Order Number:
HN1B01FDW1T1/D