CAT28C17A Datasheet, PDF (4/12 Pages) Catalyst Semiconductor – 16K-Bit CMOS PARALLEL E2PROM

CAT28C17A
Table 4. RELIABILITY CHARACTERISTICS (Note 4)
Symbol
Parameter
Test Method
Min
Max
N_END
Endurance
MIL−STD−883, Test Method 1033
10,000
T_DR
Data Retention
MIL−STD−883, Test Method 1008
10
V_ZAP
ESD Susceptibility
MIL−STD−883, Test Method 3015
2,000
I_LTH (Note 5)
Latch−Up
JEDEC Standard 17
100
4. This parameter is tested initially and after a design or process change that affects the parameter.
5. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V_CC + 1 V.
Units
Cycles/Byte
Years
V
mA
Table 5. D.C. OPERATING CHARACTERISTICS (V_CC = 5 V ±10%, unless otherwise specified.)
Limits
Symbol
Parameter
Test Conditions
Min
Typ
Max
I_CC
V_CC Current (Operating, TTL)
CE = OE = V_IL,
35
f = 1/t_RC min, All I/O’s Open
I_CCC (Note 6)
V_CC Current (Operating, CMOS) CE = OE = V_ILC,
25
f = 1/t_RC min, All I/O’s Open
I_SB
V_CC Current (Standby, TTL)
CE = V_IH, All I/O’s Open
1
I_SBC (Note 7)
V_CC Current (Standby, CMOS)
CE = V_IHC, All I/O’s Open
100
I_LI
Input Leakage Current
V_IN = GND to V_CC
−10
10
I_LO
Output Leakage Current
V_OUT = GND to V_CC,
−10
10
CE = V_IH
V_IH (Note 7)
High Level Input Voltage
V_IL (Note 6)
Low Level Input Voltage
V_OH
High Level Output Voltage
V_OL
Low Level Output Voltage
V_WI
Write Inhibit Voltage
6. V_ILC = −0.3 V to +0.3 V
7. V_IHC = V_CC −0.3 V to V_CC + 0.3 V
I_OH = −400 mA
I_OL = 2.1 mA
2
−0.3
2.4
3.0
V_CC + 0.3
0.8
0.4
Units
mA
mA
mA
mA
mA
mA
V
V
V
V
V
Table 6. A.C. CHARACTERISTICS, READ CYCLE (V_CC = 5 V ±10%, unless otherwise specified.)
28C17A−20
Symbol
Parameter
Min
Max
t_RC
Read Cycle Time
200
t_CE
CE Access Time
200
t_AA
Address Access Time
200
t_OE
OE Access Time
80
t_LZ (Note 8)
CE Low to Active Output
0
t_OLZ (Note 8)
OE Low to Active Output
0
t_HZ (Notes 8, 9) CE High to High−Z Output
55
t_OHZ (Notes 8, 9) OE High to High−Z Output
55
t_OH (Note 8)
Output Hold from Address Change
0
8. This parameter is tested initially and after a design or process change that affects the parameter.
9. Output floating (High−Z) is defined as the state when the external data line is no longer driven by the output buffer.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
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