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MC74HC4351 Datasheet, PDF (3/13 Pages) ON Semiconductor – High−Performance Silicon−Gate CMOS
MC74HC4351
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC Positive DC Supply Voltage
(Ref. to GND) – 0.5 to + 7.0
V
(Ref. to VEE) – 0.5 to 14.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VEE Negative DC Supply Voltage (Ref. to GND)
– 7.0 to + 0.5
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VIS Analog Input Voltage
VEE − 0.5
V
to VCC + 0.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin DC Input Voltage (Ref. to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ I
DC Current Into or Out of Any Pin
– 1.5 to VCC + 1.5 V
± 25
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ PD Power Dissipation in Still Air,Plastic or Ceramic DIP†
750
mW
SOIC Package†
500
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Tstg Storage Temperature
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TL Lead Temperature, 1 mm from Case for
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 10 Seconds
(Plastic DIP or SOIC Package)
260
(Ceramic DIP)
300
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *Maximum Ratings are those values beyond which damage to the device may occur.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Functional operation should be restricted to the Recommended Operating Conditions.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
ranges indicated in the Recom-
mended Operating Conditions.
Unused digital input pins must be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused Analog I/O pins may be left
open or terminated. See Applica-
tions Information.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC Positive DC Supply Voltage
(Ref. to GND) 2.0 6.0 V
(Ref. to VEE) 2.0 12.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VEE Negative DC Supply Voltage
(Ref. to GND) – 6.0 GND V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VIS
Analog Input Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Vin
Digital Input Voltage (Ref. to GND)
VEE VCC
V
GND VCC V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VIO* Static or Dynamic Voltage Across Switch
— 1.2 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ TA
Operating Temperature, All Package Types
– 55 + 125 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tr, tf
Input Rise and Fall Time,
VCC = 2.0 V 0 1000 ns
Channel Select or Enable
VCC = 4.5 V 0
500
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Inputs (Figure 9a)
VCC = 6.0 V 0
400
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ *For voltage drops across the switch greater than 1.2 V (switch on), excessive VCC current may
be drawn; i.e., the current out of the switch may contain both VCC and switch input
components. The reliability of the device will be unaffected unless the Maximum Ratings are
exceeded.
DC ELECTRICAL CHARACTERISTICS Digital Section (Voltages Referenced to GND) VEE = GND, Except Where Noted
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Guaranteed Limit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VIH
Parameter
Minimum High−Level Input
Voltage, Channel−Select or
Enable Inputs
Test Conditions
Ron = Per Spec
VCC
– 55 to
V
25_C v 85_C v 125_C Unit
2.0
1.5
1.5
1.5
V
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VIL
Maximum Low−Level Input
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Voltage, Channel−Select or
Enable Inputs
Ron = Per Spec
2.0
0.3
0.3
0.3
V
4.5
0.9
0.9
0.9
6.0
1.2
1.2
1.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Iin
Maximum Input Leakage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current, Channel−Select or
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Enable Inputs
Vin = VCC or GND,
VEE = – 6.0 V
6.0
± 0.1
± 1.0
± 1.0
μA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC
Maximum Quiescent Supply
Channel Select = VCC or GND
Current (per Package)
Enables = VCC or GND
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VIS = VCC or GND VEE = GND 6.0
2
VIO = 0 V
VEE = – 6.0 6.0
8
μA
20
40
80
160
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ NOTE:Information on typical parametric values can be found in Chapter 2 of the Motorola High−Speed CMOS Data Book (DL129/D).
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