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MC74HC4351 Datasheet, PDF (3/13 Pages) ON Semiconductor – High−Performance Silicon−Gate CMOS | |||
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MC74HC4351
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS*
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
Parameter
Value
Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC Positive DC Supply Voltage
(Ref. to GND) â 0.5 to + 7.0
V
(Ref. to VEE) â 0.5 to 14.0
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VEE Negative DC Supply Voltage (Ref. to GND)
â 7.0 to + 0.5
V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIS Analog Input Voltage
VEE â 0.5
V
to VCC + 0.5
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin DC Input Voltage (Ref. to GND)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ I
DC Current Into or Out of Any Pin
â 1.5 to VCC + 1.5 V
± 25
mA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ PD Power Dissipation in Still Air,Plastic or Ceramic DIPâ
750
mW
SOIC Packageâ
500
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Tstg Storage Temperature
â 65 to + 150
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TL Lead Temperature, 1 mm from Case for
_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ 10 Seconds
(Plastic DIP or SOIC Package)
260
(Ceramic DIP)
300
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ *Maximum Ratings are those values beyond which damage to the device may occur.
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Functional operation should be restricted to the Recommended Operating Conditions.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highâimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
ranges indicated in the Recom-
mended Operating Conditions.
Unused digital input pins must be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused Analog I/O pins may be left
open or terminated. See Applica-
tions Information.
â Derating â Plastic DIP: â 10 mW/_C from 65_ to 125_C
Ceramic DIP: â 10 mW/_C from 100_ to 125_C
SOIC Package: â 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola HighâSpeed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min Max Unit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCC Positive DC Supply Voltage
(Ref. to GND) 2.0 6.0 V
(Ref. to VEE) 2.0 12.0
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VEE Negative DC Supply Voltage
(Ref. to GND) â 6.0 GND V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIS
Analog Input Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Vin
Digital Input Voltage (Ref. to GND)
VEE VCC
V
GND VCC V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIO* Static or Dynamic Voltage Across Switch
â 1.2 V
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ TA
Operating Temperature, All Package Types
â 55 + 125 _C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ tr, tf
Input Rise and Fall Time,
VCC = 2.0 V 0 1000 ns
Channel Select or Enable
VCC = 4.5 V 0
500
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Inputs (Figure 9a)
VCC = 6.0 V 0
400
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ *For voltage drops across the switch greater than 1.2 V (switch on), excessive VCC current may
be drawn; i.e., the current out of the switch may contain both VCC and switch input
components. The reliability of the device will be unaffected unless the Maximum Ratings are
exceeded.
DC ELECTRICAL CHARACTERISTICS Digital Section (Voltages Referenced to GND) VEE = GND, Except Where Noted
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Guaranteed Limit
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Symbol
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIH
Parameter
Minimum HighâLevel Input
Voltage, ChannelâSelect or
Enable Inputs
Test Conditions
Ron = Per Spec
VCC
â 55 to
V
25_C v 85_C v 125_C Unit
2.0
1.5
1.5
1.5
V
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIL
Maximum LowâLevel Input
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Voltage, ChannelâSelect or
Enable Inputs
Ron = Per Spec
2.0
0.3
0.3
0.3
V
4.5
0.9
0.9
0.9
6.0
1.2
1.2
1.2
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Iin
Maximum Input Leakage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Current, ChannelâSelect or
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Enable Inputs
Vin = VCC or GND,
VEE = â 6.0 V
6.0
± 0.1
± 1.0
± 1.0
μA
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ICC
Maximum Quiescent Supply
Channel Select = VCC or GND
Current (per Package)
Enables = VCC or GND
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VIS = VCC or GND VEE = GND 6.0
2
VIO = 0 V
VEE = â 6.0 6.0
8
μA
20
40
80
160
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ NOTE:Information on typical parametric values can be found in Chapter 2 of the Motorola HighâSpeed CMOS Data Book (DL129/D).
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