CS1112 Datasheet, PDF (3/12 Pages) ON Semiconductor – Quad Power Output Driver

CS1112
ELECTRICAL CHARACTERISTICS (9.0 V < V_PWR < 17 V, 4.5 V < V_DD < 5.5 V, –40°C < T_{J <} 125°C,
5.5 V < V_PWR < 25 V, (Outputs Functional); unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Supply Voltages and Currents
V_DD Power On Reset Threshold
V_DD Power On Reset Hysteresis
V_PWR Undervoltage
V_PWR Overvoltage Lockout
Digital Supply Current, I_V(DD)
Analog Supply Current, I_V(PWR)
Sleep Current, I_V(PWR)
Digital Inputs and Outputs
Outputs Latched Off By Event
–
Outputs Latched Off By Event
Outputs Latched Off By Event
All Outputs On (@ 350 mA)
All Outputs On (@ 350 mA)
V_DD ≤ 0.5 V
2.5
3.0
–
200
4.0
4.5
30
35
–
–
–
–
–
–
V_IN High
V_IN Low
V_IN Hysteresis
Input Pulldown Current
Input Pullup Current
Status Low
Fault Detection/Timing
SI, SCLK, CSB, IN0, IN1, IN2, IN3
SI, SCLK, CSB, IN0, IN1, IN2, IN3
–
SI, IN0, IN1, IN2, IN3, V_IN = 30% V_DD
CSB, V_IN = 70% V_DD
I_STATUS = 0.5 mA
70
–
–
–
–
230
–
–
–
–
–
0.1
Overcurrent Sense Time, t_SS
Overcurrent Shutdown Time
Fault Duty Cycle
Overcurrent Sense Time, R_OSC = 82 kΩ
25
62.5
Overcurrent Shutdown Time, R_OSC = 82 kΩ 1.60
3.94
After the first fault cycle, Note 1.
1.4
1.56
Open Load Trip Point
IN = Low
40
50
Open Load Sense Time
Power Outputs
Open Load Sense Time, R_OSC = 82 kΩ
12.5
–
V_DRAIN Clamp
Drain Leakage Current
Drain Leakage Current
R_DS(ON)
Current Limit
I_D = 20 mA, t_CLAMP = 100 µs
V_DRAIN = 17 V
V_DRAIN = 46 V
V_PWR = 13 V, I_D = 0.5 A
Note 2.
48
52
–
–
–
–
–
1.0
3.0
4.5
Reverse Diode Drop
Reverse Diode Drop I = 350 mA
–
–
Fall Time Delay, t_phl
V_PWR = 13 V, R_LOAD = 33 Ω,
Note 3. (see Figure 2)
–
–
Rise Time Delay, t_plh
V_PWR = 13 V, R_LOAD = 33 Ω,
Note 3. (see Figure 2)
–
–
Rise Time, t_r
Fall Time, t_f
1. Guaranteed by design.
V_PWR = 13 V, R_LOAD = 33 Ω
V_PWR = 13 V, R_LOAD = 33 Ω
0.4
–
0.4
–
2. A duty cycle mode will initiate at a minimum of 1.0 A and before the current limit.
3. Output turn on delay and turn off delay from rising edge of CSB to the output reaching 50% of V_PWR.
Max
Unit
3.5
V
–
mV
5.0
V
45
V
5.0
mA
5.0
mA
10
µA
–
%V_DD
30
%V_DD
–
mV
25
µA
–25
µA
0.5
V
100
µs
6.3
ms
1.7
%
60
%V_DD
100
µs
64
V
25
µA
400
µA
2.0
Ω
6.0
A
1.4
V
10
µs
15
µs
10
µs
10
µs
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