CM1231-02SO Datasheet, PDF (3/12 Pages) ON Semiconductor – 2,4,8-Channel Low-Capacitance ESD Protection Array

CM1231−02SO
Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min Typ Max Units
V_P
Operating Supply Voltage
I_CC5
Operating Supply Current
V_F
Diode Forward Voltage
Top Diode
Bottom Diode
V_P = 5 V
I_F = 8 mA, T_A = 25°C
5
5.5
V
1
mA
V
0.60 0.80 0.95
0.60 0.80 0.95
V_ESD
ESD Protection, Contact Discharge per IEC
61000−4−2 Standard
OUT−to−V_N Contact
IN−to−V_N Contact
T_A = 25°C
kV
±12
±4
I_RES
Residual ESD Peak Current on RDUP
(Resistance of Device Under Protection)
IEC 61000−4−2 8 kV
RDUP = 5 W, T_A = 25°C
A
2.3
V_CL
Channel Clamp Voltage
Positive Transients
Negative Transients
I_PP = 1 A, T_A = 25°C, t_P = 8/20 ms,
V
Zap at OUT, Measure at IN
+9
–1.4
R_DYN
Dynamic Resistance
Positive Transients
Negative Transients
I_PP = 1 A, T_A = 25°C, t_P = 8/20 ms,
W
Zap at OUT, Measure at IN
0.4
0.3
C_OUT
OUT Capacitance
f = 1 MHz, V_P = 5.0 V, V_IN = 2.5 V,
1.5
pF
V_OSC = 30 mV
(Note 2)
DC_OUT Channel to Channel Capacitance Match
f = 1 MHz, V_P = 5.0 V, V_IN = 2.5 V,
0.02
pF
V_OSC = 30 mV
R_S
Series Resistance
1
W
DR_S
Channel to Channel Resistance Match
±10 ±30 mW
1. All parameters specified at T_A = –40°C to +85°C unless otherwise noted.
2. Capacitance measured from OUT to V_N with IN floating.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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