PSMN2R8-40BS Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 40 V 2.9 m standard level MOSFET in D2PAK

NXP Semiconductors
PSMN2R8-40BS
N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aae992
max
typ
min
60
120
180
T_j (°C)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Gate-source threshold voltage as a function of
junction temperature
junction temperature
2
a
03aa27
1.5
1
0.5
0
−60
0
60
120 _{Tj (°C)} 180
10
R_DSon
(mΩ)
8
V_GS (V) = 5
6
003aad432
5.5
4
6.5
6
2
20
8 10
0
0
20
40
60
80 _{ID (A)} 100
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Drain-source on-state resistance as a function
of drain current; typical values
PSMN2R8-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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