PSMN2R8-40BS Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 40 V 2.9 m standard level MOSFET in D2PAK

NXP Semiconductors
PSMN2R8-40BS
N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK
100
I_D
(A)
80
60
40
20
0
0
003aad433
T_j = 175 °C
T_j = 25 °C
2
4
V_GS (V) ⁶
125
g_fs
(S)
100
75
50
25
0
0
003aad438
25
50
75
100
I_D (A)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Forward transconductance as a function of
function of gate-source voltage; typical values
drain current; typical values
120
I_D
(A)
20
100 ₁₀
8
80
6.5
6
60
40
20
0
0
0.3
003aad431
5.5
5
V_GS (V) = 4.5
0.6
0.9
1.2
V_DS (V)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 9. Output characteristics: drain current as a
Fig 10. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
PSMN2R8-40BS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 March 2012
© NXP B.V. 2012. All rights reserved.
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